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Data Sheet, Rev. 1.0, September 2008
HITFET - BTS3205N
Smart Low-Side Power Switch
Automotive Power
Smart Low-Side Power Switch BTS3205N
1 2 2.1 3 3.1 3.2 4 4.1 4.2 4.2.1 5 5.1 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 5.1.6 6 6.1 6.2 6.3 6.4 7 8
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Assignment BTS3205N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transient Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input and Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Failure Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7 8 8
10 10 10 11 11 12 12 12 15 15 15 17 18
Package Outlines BTS3205N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Data Sheet
2
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch HITFET
BTS3205N
1
Features * * * * * * * * *
Overview
Logic Level input Short circuit and Overload protection Current limitation Input protection (ESD) Thermal protection with auto restart Compatible to standard Power MOSFET Analog driving possible Green Product (RoHS compliant) AEC Qualified
PG-SOT-223-4
Description The BTS3205N is a one channel low-side power switch in PG-SOT-223-4 package providing embedded protective functions. The device is monolithic integrated and consist of an N-channel power MOSFET transistor and additional protection circuitry.
Table 1
Product Summary
Drain Voltage Input Voltage Typical On-State Resistance at Tj = 25C and Vin = 10V Maximum On-State Resistance at Tj = 150C and Vin = 10V Nominal Load Current Drain Current Single Clamping Energy
1) Active clamped 2) Internally limited
VD VIN(max) RDS(ON,amb typ) RDS(ON,hot max) IDnom(min) ID EAS
42 V1) 10 V 0.7 1.9 350 mA 600 mA2) 65 mJ
Type BTS3205N Data Sheet
Package PG-SOT-223-4 3
Marking 3205N Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Overview Protective Functions * * * * Electrostatic discharge protection (ESD) Active clamp over voltage protection Thermal shutdown with auto restart Short circuit protection
Fault Information * * Thermal shutdown Short to Battery and overload
Applications * * * * Designed for driving Relays in Automotive Applications All types of resistive, inductive and capacitive loads Suitable for loads with peak currents Replaces discrete circuits
Detailed Description The device is able to switch all kind of resistive, inductive and capacitive loads, limited by EAS and maximum current capabilities. The BTS3205N offers ESD protection of the IN Pin in relation to the Source Pin. The overtemperature protection prevents the device from overheating due to overload and/or bad cooling conditions. The temperature information is given by a temperature sensor in the power MOSFET. During thermal shutdown the device tries to sink an increased input current to feedback the fault condition. The BTS3205N has a thermal-auto-restart function, the device will turn on again after the measured temperature has dropped down for the thermal hysteresis. The over voltage protection is active during load-dump or inductive turn off conditions. The power MOSFET is limiting the Drain - Source voltage to the defined clamping voltage. This function is available regardless of the input pin state.
Data Sheet
4
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block DiagramTerms
2
Block Diagram
Drain Overvoltage Protection Overtemperature Protection
IN
Gate Driving Unit
ESD Protection
Overload detection and Current limiter Source
BlockDiagram _3205N.emf
Figure 1
Block Diagram
2.1
Terms
Figure 2 shows all external terms used in this data sheet.
Vbb
Vbb RL
Rin V IN
BTS3205N
I IN IN Source IS
Drain
ID VD
GND
Terms .emf
Figure 2
Terms
Data Sheet
5
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Pin ConfigurationPin Assignment BTS3205N
3
3.1
Pin Configuration
Pin Assignment BTS3205N
DRAIN (TAB) 4
1 IN
Figure 3
2 3 DRAIN SOURCE
Pin_SOT 223.emf
Pin Configuration PG-SOT-223-4
3.2
Pin 1 2, 4 3
Pin Definitions and Functions
Symbol IN Drain Source Function Input / fault feedback Load connection Ground connection
Data Sheet
6
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
General Product CharacteristicsAbsolute Maximum Ratings
4
4.1
General Product Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = -40 C to +150 C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Min. Voltages 4.1.1 4.1.2 4.1.3 4.1.4 4.1.5 4.1.6 Drain Current Drain voltage Input Voltage Input Current Max. 42 10 2 600 65 V V mA mA mA mJ
2)
Test Conditions
VD VIN IIN
- -0.2 -2
VIN = 0 V, ID = 10 mA
- -0.2 V < VIN < 10 V
self limited
ID
- 0
VIN < -0.2 V or VIN > 10 V 3) Tj = 25 C ID = 350 mA; Vbb = 28 V; TJ(start) = 85 C ID = 250 mA; Vbb = 28 V; TJ(start) = 150 C ID = 200 mA; Vbb = 13.5 V; TJ(start) = 150 C ID = 170 mA; Vbb = 13.5 V; TJ(start) = 150 C 4) Ta = 85 C
- - IN Pin R = 1.5 k; C = 100 pF; TJ = 25 C
Energies Unclamped single pulse inductive energy EAS single pulse Unclamped single pulse inductive energy single pulse Unclamped repetitive pulse inductive energy 1x104 cycles Unclamped repetitive pulse inductive energy 1x106 cycles Total Power Dissipation Operating temperature Storage temperature Electrostatic discharge voltage 5)
4.1.7
-
30
mJ
4.1.8
EAR
0
18
mJ
4.1.9
-
13
mJ
4.1.10 4.1.11 4.1.12 4.1.13
Ptot TJ Tstg VESD
- -40 -55 -2
0.78
W
Temperatures +150 C +150 C 2 kV
ESD Susceptibility
1) 2) 3) 4)
Not subject to production test, specified by design. Active clamped. Internally limited. Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm x 114.3 mm with buried planes). PCB is mounted vertical without blown air. 5) ESD susceptibility HBM according to EIA/JESD 22-A 114B, section 4.
Data Sheet
7
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
General Product CharacteristicsThermal Resistance
4.2
Pos. 4.2.1 4.2.2
Thermal Resistance
Parameter Junction to Soldering Point Junction to Ambient Symbol Min. Limit Values Typ. - 63 Max. 42 - K/W K/W
1) 2) 1) 2)
Unit
Conditions
RthJC RthJA
- -
1) Not subject to production test, specified by design. 2) Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm x 114.3 mm with buried planes). PCB is mounted vertical without blown air with 0.78W power dissipation generated on the DMOS.
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.
4.2.1
Transient Thermal Impedance
90 75 ZthJA
60 Zth [ / W ]
45 30
ZthJC
K
15
0 -5 10
10
-4
10
-3
10
-2
10 tp [ s ]
-1
1
10
1
10
2
10
3
Zth_3205 N.emf
Figure 4
Typical Transient Thermal Impedance single pulse, ZthJA and ZthJC
Data Sheet
8
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
General Product CharacteristicsThermal Resistance
102
D = 0.5
10 ZthJA [K/W]
1
D = 0.2 D = 0.1 D = 0.05
1
D = 0.02 D = 0.01 Single pulse
10
-1
10
-6
10
-5
10
-4
10
-3
10
-2
10 t p [s]
-1
1
10
1
10
2
10
3
pulse_BTS3205 N.emf
Figure 5
Typical Transient Thermal Impedance ZthJA with different Duty cycles ZthJA = f(tp) , D = tp/T, Ta = 25 C
Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm x 114.3 mm with buried planes). PCB is mounted vertical without blown air with 0.78W power dissipation generated for single pulse on the DMOS
Data Sheet
9
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block Description and CharacteristicsInput and Power Stage
5
5.1 5.1.1
Block Description and Characteristics
Input and Power Stage Input Circuit
Figure 6 shows the input circuit of the BTS3205N. The zener Diode protects the input circuit against ESD pulses. The internal circuitry is supplied by the input PIN. During normal operation the Input is connected to the Gate of the power MOSFET. During fault condition the device tries to sink the current IINlim in order to give the fault information back to the driving circuit.
I INnom I IN IN
Logic Gate Fault condition
ZD IINlim Source Input.emf
Figure 6
Input Circuit
2,00 1,75
V IN(th) [ V ]
1,50 1,25 1,00 0,75 0,50 0,25 0,00
-50 -25 0 25 50 75 100 125 150
T [C] Vinth.emf
Figure 7
Typical Input Threshold Voltage Vinth = f(TJ); ID = 50 A, VD = VIN
0,7 0,6 0,5
ID [ A ]
0,4 0,3 0,2 0,1 0
0 1 2 3 4 5
VIN [ V ] Transferchar.emf
Figure 8
Typical Transfer Characteristic ID = f(VIN); VD = 12 V, TJstart = 25 C
Data Sheet
10
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block Description and CharacteristicsInput and Power Stage
5.1.2
Failure Feedback
During failure condition the BTS3205N tries to sink a increased input current IINlim.
5.1.3
Output On-State Resistance
The on-state resistance depends on the junction temperature TJ. Figure 9 shows this dependancy for the typical on-state resistance RDS(on).
1,5 1,3
RDS(on) [ ]
1,1 0,9 0,7 0,5 0,3
-50 -25
Vin = 5V
Vin = 10V
0
25
50
75
100
125
150
T [ C ] rdson.emf
Figure 9
Typical On-State Resistance, RDS(on) = f(TJ)
Data Sheet
11
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block Description and CharacteristicsInput and Power Stage
5.1.4
Power Dissipation
The maximum allowed power dissipation in Figure 10 is calculated by RthJC and RthJA.
1,00
R thJC=42 K/W R thJA=63 K/W Ptot / W
0,10
0,01
-50 -25 0 25 50 75 100 125 150
T / C Ptot_3205N.emf
Figure 10 Maximal Allowable Power Dissipation
5.1.5
Output Timing
A voltage signal at the input pin above the threshold voltage causes the power MOSFET to switch on with a dedicated slope which is optimized for low EMC emission. Figure 11 shows the timing definition.
IN [V] 5.0 0 VD Vbb 90 % toff t
10 % t ton Switching.emf
Figure 11
Definition of Power Output Timing for Resistive Load
5.1.6
Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. All voltages with respect to Source Pin unless otherwise stated.
Data Sheet
12
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block Description and CharacteristicsInput and Power Stage
Electrical Characteristics: Input and Power Stage
Tj = -40 C to +150 C , all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified Pos. Parameter Input 5.1.1 Nominal Input current 5.1.2 Input current protection mode 5.1.3 Input threshold voltage Symbol Limit Values Min. Typ. Max. Unit Test Conditions
IINnom IINlim VINTH
- - 1.3
10 100 1.7
30 150 2.2
A A V
5.1.4
0.8
-
-
V
VD = 0 V; VIN = 10 V VIN = 10 V; TJ = 150 C VD = VIN; ID = 50 A TJ = 25C VD = VIN; ID = 50 A, 150 C
Power Stage 5.1.5 On-State Resistance
RDS(on)
-
0.9
-
1)
TJ = 25 C; VIN = 5 V;
ID = 200mA
5.1.6
-
1.8
2.4
TJ = 150 C; VIN = 5 V;
ID = 200mA
1)
5.1.7
-
0.7
-
5.1.8
-
1.4
1.9
5.1.9 Nominal load current
IDnom
350
550
-
mA
5.1.10 Zero input voltage drain current
IDSS
- - -
- 2.5 4
5 6 7
A A A
TJ = 25 C; VIN = 10 V; ID = 200mA TJ = 150 C; VIN = 10 V; ID = 200mA 1) TJ < 150 C; TA = 105 C2); VIN = 5 V VDS = 13.5 V;VIN = 0 V; TJ = 150 C VDS = 32 V;VIN = 0 V; TJ = -40 C to 85 C VDS = 32 V;VIN = 0 V; TJ = 150 C
Data Sheet
13
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Block Description and CharacteristicsInput and Power Stage Electrical Characteristics: Input and Power Stage (cont'd)
Tj = -40 C to +150 C , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified
Pos. Parameter Switching Vbb = 12 V, RL = 82 5.1.11 Turn-on time 5.1.12 Turn-off time 5.1.13 Slew rate on Symbol Limit Values Min. Typ. Max. Unit Test Conditions
ton toff
- -
16 15 2.5
38 45 9.3
s s
VIN = 10 V to 90% ID VIN = 0 V to 10% ID
dVds/dton -
V/s 50% - 30% Vbb; RL = 82 ; VIN = 0 V to 10 V; Vbb = 12 V
5.1.14 Slew rate off
dVds/dtoff -
6.0
18.2 V/s 30% - 50% Vbb; RL = 82 ; VIN = 10 V to 0 V; Vbb = 12 V -1.5 V
Inverse Diode 5.1.15 Inverse Diode forward voltage
VD
-
-1.0
ID = -1 A; VIN = 0 V
1) Not subject to production test, calculated by RthJA and RDS(on). 2) Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm x 114.3 mm with buried planes). PCB is mounted vertical without blown air.
Data Sheet
14
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Protection FunctionsThermal Protection
6
Protection Functions
The device provides embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operation.
6.1
Thermal Protection
The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this a temperature sensor located in the Power MOSFET is used. The BTS3205N has a thermal auto-restart function. After the device has cooled down it will switch on again see Figure 12.
Thermal shutdown IN 5V 0 t TJ TJSD TJSD restart
I IN I INf IIS 0
t
t Thermal_fault_autorestart.emf
Figure 12
Error Signal via Input Current at Thermal Shutdown
6.2
Overvoltage Protection
When switching off inductive loads with low-side switches, the Drain-Source voltage VD rises above battery potential, because the inductance intends to continue driving the current.
Drain
Source OutputClamap.emf
Figure 13
Output Clamp
The BTS3205N is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain level. See Figure 13 and Figure 14 for more details.
Data Sheet
15
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Protection FunctionsOvervoltage Protection
IN 5V 0 ID
Turn off due to over temperature or short circuit
t
VD V C lamp
t
V bb
t InductiveLoad.emf
Figure 14
Switching an Inductance
While demagnetization of inductive loads, energy has to be dissipated in the BTS3205N. This energy can be calculated with following equation:
V out ( CL ) RL IL L E = ( V bb + V out ( CL ) ) ------------------------ ln 1 + ------------------------ + I L -----RL RL V out ( CL )
(1)
Following equation simplifies under assumption of RL = 0
V bb 2 E = 1 LI L 1 + ------------------------------------- -2 V out ( CL ) - V bb
(2)
Data Sheet
16
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Protection FunctionsShort Circuit Protection
6.3
Short Circuit Protection
The condition short circuit is an overload condition of the device. If the current reaches the value of Ilim the device starts to limit the current. In the condition of current limitation the device heats up. If the thermal shutdown temperature is reached the device turns off. Figure 15 shows this behavior. During the current limitation the input current is above IINnom. During the time period tdlim, the current can be above Ilim.
Occurrence of Over current or high ohmic Short circuit Turn off due to over temperature Restart after short circuit turn off Restart into normal load condition IN 5V 0 ID V b b /Zsc t
I lim
td lim TJ TJSD TJSD t
t I IN I IN lim I IN n o m 0 t Short_circuit.emf
Figure 15
Short Circuit Behavior of BTS3205N
As the device is a low side switch it can be assumed that the Source to Ground path has a neglectable low impedance and resistance. Therefore all impedance and resistance in the load path during short circuit is merged into Zsc.
Data Sheet
17
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Protection FunctionsCharacteristics
6.4
Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Electrical Characteristics: Protection Functions
Tj = -40 C to +150 C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter Thermal Protection 6.4.1 Thermal shut down junction temperature 6.4.2 Thermal hysteresis Overvoltage Protection 6.4.3 Drain clamp voltage Current Limitation and Short Circuit Protection 6.4.4 Current limitation Symbol Limit Values Min. Typ. Max. 1751) - 10 - - 55 C K V -
1)
Unit
Test Conditions
TJSD
TJSD
150 - 42
VClamp
VIN = 0 V; ID = 10 mA; VIN = 10 V;VDS = 12 V; tmeasure = 4 x tdlim TJ = 25 C1) TJ = 150 C TJ = -40 C 1)
1)
Ilim
0.6
0.9
1.2
A
0.3 - 6.4.5 Current limitation delay time
1) Not subject to production test, specified by design.
- - -
- 1.4 50 s
tdlim
-
Data Sheet
18
Rev. 1.0, 2008-09-25
Smart Low-Side Power Switch BTS3205N
Package Outlines BTS3205N
7
Package Outlines BTS3205N
A
6.5 0.2 3 0.1
4
1.60.1 0.1 MAX. B
1
2
3
0.25 M A
0.7 0.1 4.6
2.3 0.25 M B
0.5 MIN.
0.28 0.04
0...10
SOT223-PO V04
Figure 16
PG-SOT-223-4 (Small Outline Transistor)
Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 19
Dimensions in mm Rev. 1.0, 2008-09-25
3.5 0.2
7 0.3
Smart Low-Side Power Switch BTS3205N
Revision History
8
Version Rev. 1.0
Revision History
Date 2008-09-25 Changes released data sheet
Data Sheet
20
Rev. 1.0, 2008-09-25
Edition 2008-09-25 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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